Semiconductor device and method for forming the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11990415
APP PUB NO 20210050302A1
SERIAL NO

16991655

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Abstract

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A semiconductor device and method for forming same are provided. The method for forming a semiconductor device includes: providing a base; forming an interlayer dielectric layer over the base; forming contact holes by etching the interlayer dielectric layer; forming a barrier layer over the base in the contact holes; and forming a metal layer over the barrier layer. The contact holes exposed a portion of a surface of the base. The metal layer fully filled the contact hole.

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Patent Owner(s)

  • SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jing, Xuezhen Shanghai, CN 6 1
Tong, Zheyuan Shanghai, CN 1 0
Xiao, Zhangru Shanghai, CN 3 0
Yu, Hailong Shanghai, CN 27 22
Zhang, Tiantian Shanghai, CN 36 95

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