Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film

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United States of America

PATENT NO 11371161
APP PUB NO 20200385884A1
SERIAL NO

16892793

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Abstract

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A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.

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Patent Owner(s)

  • DENSO CORPORATION; NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagaoka, Tatsuji Nagakute, JP 70 1246
Nishinaka, Hiroyuki Kyoto, JP 23 9
Yoshimoto, Masahiro Kyoto, JP 44 130

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