Doping through diffusion and epitaxy profile shaping

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11171003
APP PUB NO 20190096674A1
SERIAL NO

16204023

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Abstract

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A method includes etching a semiconductor substrate to form a first trench and a second trench. A remaining portion of the semiconductor substrate is left between the first trench and the second trench as a semiconductor region. A doped dielectric layer is formed on sidewalls of the semiconductor region and over a top surface of the semiconductor region. The doped dielectric layer includes a dopant. The first trench and the second trench are filled with a dielectric material. An anneal is then performed, and a p-type dopant or an n-type dopant in the doped dielectric layer is diffused into the semiconductor region to form a diffused semiconductor region.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Chih Hsuan Houlong Township, TW 12 43
Chiu, Yi-Wei Kaohsiung, TW 140 725
Hsu, Li-Te Shanhua Township, TW 60 250
Liao, Chih-Teng Hsinchu, TW 72 290

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