Semiconductor device and method for manufacturing same
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United States of America Patent
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Mar 17, 2015
Grant Date -
May 9, 2013
app pub date -
Jul 14, 2011
filing date -
Aug 3, 2010
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Abstract
There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate having a main surface, and a silicon carbide layer. The silicon carbide layer is formed on the main surface of the substrate. The silicon carbide layer includes a side surface as an end surface inclined relative to the main surface. The side surface substantially includes one of a {03-3-8} plane and a {01-1-4} plane in a case where the silicon carbide layer is of hexagonal crystal type, and substantially includes a {100} plane in a case where the silicon carbide layer is of cubic crystal type.
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