Method of manufacturing a semiconductor element
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United States of America Patent
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Jan 12, 2010
Grant Date -
Oct 4, 2007
app pub date -
Apr 3, 2007
filing date -
Apr 3, 2006
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of manufacturing a semiconductor element, includes forming a lower metal wiring layer and an interlayer insulating film on a substrate, forming an opening through the interlayer insulating film, such that the opening is in communication with an upper surface of the lower metal wiring layer, cleaning the opening, forming a metal wiring line protecting film in the opening, such that the metal wiring line protecting film covers the lower metal wiring layer, washing the opening to remove the metal wiring line protecting film, such that a top surface of the lower metal wiring layer is exposed, and drying the substrate.
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