Phase change memory with various grain sizes
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United States of America Patent
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Feb 22, 2011
Grant Date -
Mar 26, 2009
app pub date -
Sep 20, 2007
filing date -
Sep 20, 2007
priority date (Note) -
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Abstract
A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The first and the second phase change layers are depth-wise regions of the phase change element. The second phase change layer has a second average grain size different from the first average grain size.
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