Methods of manufacturing a stressed MOS transistor structure
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United States of America Patent
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Mar 4, 2008
Grant Date -
May 19, 2005
app pub date -
Dec 27, 2004
filing date -
Mar 31, 2003
priority date (Note) -
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Abstract
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.
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