Field effect transistor using transition metal dichalcogenide and a method for forming the same

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United States of America Patent

PATENT NO 11581185
APP PUB NO 20210305046A1
SERIAL NO

17346712

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Abstract

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In a method of forming a two-dimensional material layer, a nucleation pattern is formed over a substrate, and a transition metal dichalcogenide (TMD) layer is formed such that the TMD layer laterally grows from the nucleation pattern. In one or more of the foregoing and following embodiments, the TMD layer is single crystalline.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuu, Chih-Piao Hsinchu, TW 8 8
Li, Lain-Jong Hsinchu, TW 81 795
Li, Ming-Yang Hsinchu, TW 20 21

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