Methods and apparatus for processing a substrate

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United States of America Patent

PATENT NO 11898236
APP PUB NO 20230122956A1
SERIAL NO

17506075

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chong, Halbert San Jose, US 12 11
Forster, John C Mountain View, US 97 2820
Fu, Gang Cupertino, US 58 1339
Gung, Tza-Jing San Jose, US 73 817
Lei, Jianxin Fremont, US 41 185
Miller, Keith A Mountain View, US 117 1945
Nayak, Avinash Bangalore, IN 2 0
Reddy, Sundarapandian Ramalinga Vijayalakshmi Bangalore, IN 6 0
Savandaiah, Kirankumar Neelasandra Bangalore, IN 69 119
Shi, Tiefeng San Jose, US 11 14
Wang, Rongjun Dublin, US 116 1562
Wang, Zhiyong San Jose, US 185 713
Whig, Renu Chandler, US 49 634
Wysok, Irena H San Jose, US 11 12
Zhou, Lei San Jose, US 257 839

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