Manufacturing method of Schottky gate FET
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United States of America Patent
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-
Feb 11, 1986
Grant Date -
N/A
app pub date -
Jun 7, 1984
filing date -
Jun 13, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An etched SiO.sub.2 film component serving as a mask at the time of formation of source and drain electrodes in a surface layer of a GaAs substrate by means of ion implantation is side-etched before a gate electrode is formed. An SiO.sub.2 film component has a narrowed width smaller than a distance between the source and drain electrodes while the SiO.sub.2 film component supports a metal mask patterned film at its top surface. The SiO.sub.2 film component is replaced with a metal layer serving as a gate of a self-aligned Schottky gate FET. According to this method, a metal with high heat resistance need not be used as a metal material of the gate layer.
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