Single mask MIM capacitor and resistor with in trench copper drift barrier
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United States of America Patent
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Mar 13, 2007
Grant Date -
Jul 20, 2006
app pub date -
Jan 18, 2005
filing date -
Jan 18, 2005
priority date (Note) -
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status (Latency Note)
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Abstract
The formation of a MIM (metal insulator metal) capacitor (164) and concurrent formation of a resistor (166) is disclosed. A copper diffusion barrier (124) is formed over a copper deposition (110) that serves as a bottom electrode (170) of the capacitor (164). The copper diffusion barrier (124) mitigates unwanted diffusion of copper from the copper deposition (110), and is formed via electro-less deposition such that little to none of the barrier material is deposited at locations other than over a top surface (125) of the deposition of copper/bottom electrode. Subsequently, layers of dielectric (150) and conductive (152) materials are applied to form a dielectric (172) and top electrode (174) of the MIM capacitor (164), respectively, where the layer of conductive top electrode material (152) also functions to concurrently develop the resistor (166) on the same chip as the capacitor (164).
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