Evaluation of pattern formation process, photo masks for the evaluation, and fabrication method of a semiconductor device with the evaluation process
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United States of America Patent
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May 26, 2009
Grant Date -
Nov 3, 2005
app pub date -
Apr 19, 2005
filing date -
Apr 20, 2004
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Abstract
A method for evaluating a pattern formation process includes applying a photoresist on a substrate, transferring a first pattern and a second pattern adjacent to or at least partly overlapped with each other to the photoresist, wherein the first pattern includes a plurality of lines consisting of transparent regions, having the same length and a line-width less than or on the order of wavelengths of visible light, periodically located parallel to one another with end portions aligned on both sides thereof, and the second pattern comprises a transparent region having a larger area compared with each of the lines, and determining, in a first pattern formed on the substrate with the first pattern transferred to the photoresist, by an optical means, an amount of shorting of the lines in a direction parallel to the line.
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