Ferroelectric memory device
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United States of America Patent
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Oct 6, 2009
Grant Date -
Dec 29, 2005
app pub date -
Apr 8, 2005
filing date -
Mar 18, 2004
priority date (Note) -
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Abstract
A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower electrode made of a first metal film formed on the wall and bottom of the first opening and electrically connected to the upper end of the first plug, a capacitive dielectric film made of a ferroelectric film formed on the lower electrode, and an upper electrode made of a second metal film formed on the capacitive dielectric film. The second conductive layer and the upper electrode are electrically connected to each other in the first and second insulating films.
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