Semiconductor device and methods of making semiconductor device using graphene
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United States of America Patent
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Aug 5, 2014
Grant Date -
Apr 4, 2013
app pub date -
Oct 4, 2012
filing date -
Oct 4, 2011
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Abstract
A semiconductor device and methods of making a semiconductor device using graphene are described. A monolithic three dimensional integrated circuit device includes a first layer having first active devices. The monolithic three dimensional integrated circuit device also includes a second layer having second active devices that each include a graphene portion. The second layer can be fabricated on the first layer to form a stack of active devices. A base substrate may support the stack of active devices.
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