Semiconductor structure and manufacturing method for the same
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United States of America Patent
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Jul 12, 2022
Grant Date -
Oct 22, 2020
app pub date -
Jul 3, 2020
filing date -
Oct 30, 2017
priority date (Note) -
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Abstract
Present disclosure provides a semiconductor structure, including a semiconductor substrate, a first metal layer, and a through substrate via (TSV). The semiconductor substrate has an active side. The first metal layer is closest to the active side of the semiconductor substrate, and the first metal layer has a first continuous metal feature. The TSV is extending from the semiconductor substrate to the first continuous metal feature. A width of the TSV at the first metal layer is wider than a width of the first continuous metal feature. Present disclosure also provides a method for manufacturing the semiconductor structure described herein.
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