Semiconductor device and method of fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11222901
APP PUB NO 20200091179A1
SERIAL NO

16291960

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Abstract

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A semiconductor device includes a semiconductor layer, a charge storage layer provided on a surface of the semiconductor layer via a tunnel insulating film, and an electrode layer provided on a surface of the charge storage layer via a block insulating film. The tunnel insulating film includes a plurality of first silicon oxynitride films which are provided between the semiconductor layer and the charge storage layer. The tunnel insulating film further includes a silicon oxide film provided between the first silicon oxynitride films and/or a second silicon oxynitride film which is provided between the first silicon oxynitride films and has an oxygen concentration higher than an oxygen concentration in the first silicon oxynitride film.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Noguchi, Masaki Yokkaichi Mie, JP 50 91

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