Semiconductor device having resistive element
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United States of America Patent
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-
May 27, 2003
Grant Date -
Sep 20, 2001
app pub date -
Mar 13, 2001
filing date -
Mar 16, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A trench is formed in an n.sup.+ type substrate in a vertical direction from a main surface of the substrate, and a p type layer is deposited in the trench to have a recess portion. An n.sup.+ type layer is embedded in the recess portion. Accordingly, the p type layer is formed, as a resistive element, into a U-shape with ends that are ended on the main surface of the substrate. The resistive element has a resistance length corresponding to a path of the U-shape.
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