Method of fabricating silicon integrated circuit on glass
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United States of America Patent
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Jul 4, 2006
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N/A
app pub date -
Mar 3, 2005
filing date -
Mar 3, 2005
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Abstract
A method of fabricating a silicon integrated circuit on a glass substrate includes preparing a glass substrate; fabricating a silicon layer on the glass substrate; implanting ions into the active areas of the silicon layer; covering the silicon layer with a heat pad material; activating the ions in the silicon layer by annealing while maintaining the glass substrate at a temperature below that of the thermal stability of the glass substrate; removing the heat pad material; and completing the silicon integrated circuit.
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