Method of manufacturing an NMOS device and a PMOS device
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United States of America Patent
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Jun 21, 2011
Grant Date -
Sep 25, 2008
app pub date -
Apr 25, 2008
filing date -
Dec 20, 2004
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Abstract
A CMOS device includes high k gate dielectric materials. A PMOS device includes a gate that is implanted with an n-type dopant. The NMOS device may be doped with either an n-type or a p-type dopant. The work function of the CMOS device is set by the material selection of the gate dielectric materials. A polysilicon depletion effect is reduced or avoided.
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