Method of varying etch selectivities of a film

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United States of America Patent

PATENT NO 7247578
APP PUB NO 20050148131A1
SERIAL NO

10750045

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of patterning a crystalline film. A crystalline film having a degenerate lattice comprising first atoms in a first region and a second region is provided. Dopants are substituted for said first atoms in said first region to form a non-degenerate crystalline film in said first region. The first region and the second region are exposed to a wet etchant wherein the wet etchant etches the degenerate lattice in said second region without etching the non-degenerate lattice in the first region.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brask, Justin K Portland, OR 253 8587

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