Light emitting diode
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United States of America Patent
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-
Jul 13, 1999
Grant Date -
N/A
app pub date -
Feb 10, 1998
filing date -
Feb 12, 1997
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A light emitting diode (LED) and a method for fabricating the same are disclosed, the LED including the steps of successively forming a first epitaxial layer, an active layer, and a second epitaxial layer on a substrate; patterning the active layer and the second epitaxial layer to expose a predetermined area of the first epitaxial layer; increasing an amount of N on a predetermined area of the exposed first epitaxial layer to form a TiN layer and either an Au or Al layer on the TiN layer, so as to form a first electrtode of a bilayer structure; and forming a second electrode on a predetermined area of the second epitaxial layer.
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