Polysilicon structures resistant to laser anneal lightpipe waveguide effects
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United States of America Patent
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Mar 15, 2011
Grant Date -
Jun 25, 2009
app pub date -
Mar 13, 2008
filing date -
Dec 24, 2007
priority date (Note) -
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Abstract
Laser scan annealing of integrated circuits offers advantages compared to rapid thermal annealing and furnace annealing, but can induce overheating in regions of components with polysilicon layers. Segmented polysilicon elements to reduce overheating is disclosed, as well as a method of forming components with segments polysilicon elements.
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