Semiconductor device
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United States of America Patent
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Apr 15, 2008
Grant Date -
Oct 27, 2005
app pub date -
Mar 2, 2005
filing date -
Mar 2, 2004
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor integrated circuit device having a metal thin-film resistance includes a lower insulation film formed over a semiconductor substrate via another lawyer, a metal interconnection pattern formed on the lower insulation film, an underlying insulation film formed on the lower insulation film and the metal interconnection pattern, and a contact hole formed in said underlying insulation film on the metal interconnection pattern, wherein the metal thin-film resistance is formed so as to extend from a top surface of the underlying insulation film to the contact hole in electrical contact with the metal interconnection pattern in the contact hole, at least a part of constituting elements of the semiconductor integrated circuit other than the metal thin-film resistance is disposed in a region underneath the metal thin-film resistance.
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