Semiconductor device with varying numbers of channel layers and method of fabrication thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11699742
APP PUB NO 20210376130A1
SERIAL NO

17199877

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Abstract

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A method includes providing a structure having a frontside and a backside, the structure including a substrate, two or more semiconductor channel layers over the substrate and connecting a first source/drain (S/D) feature and a second S/D feature, and a gate structure engaging the semiconductor channel layers, wherein the substrate is at the backside of the structure and the gate structure is at the frontside of the structure; recessing the first S/D feature, thereby exposing a terminal end of one of the semiconductor channel layers; and depositing a dielectric layer on the first S/D feature and covering the exposed terminal end of the one of the semiconductor channel layers.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kuan-Lun Hsinchu, TW 423 926
Chung, Cheng-Ting Hsinchu, TW 59 203

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