Toggle-type magnetoresistive random access memory
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United States of America Patent
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Oct 21, 2008
Grant Date -
Aug 23, 2007
app pub date -
Mar 2, 2005
filing date -
Mar 5, 2004
priority date (Note) -
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Abstract
A MRAM includes: first wirings, second wirings, memory cells, a second sense amplifier and a first sense amplifier. The first wirings and second wirings are extended in a first and a second direction. The memory cells are placed correspondingly to positions where the first wirings are crossed with the second wirings. The second sense amplifier detects a state of a reference cell on the basis of an output from the reference cell provided by corresponding to a reference wiring. The first sense amplifier (2) detects a state of the memory cell on the basis of an output from the reference cell and an output from the memory cell. The memory cell includes a magnetic tunneling junction element having a laminated free layer. The magnetic tunneling junction element has a magnetization easy axis direction which is different from the first and second directions.
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