Polish stop and sealing layer for manufacture of semiconductor devices with deep trench isolation
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United States of America Patent
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Oct 14, 2008
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app pub date -
Jan 27, 2006
filing date -
Jan 27, 2006
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Abstract
A method and resulting device that eliminates vertical steps or gaps in a deep trench isolation region and, thus, eliminates or drastically reduces a possibility of polysilicon stringers. Additionally, the invention allows an inexpensive dielectric material, for example a lower-quality silicon dioxide to be used to fill the deep trench and a higher quality oxide, in an electrically active region, to be used on an uppermost portion of the deep trench without affecting device performance or increasing a possibility of forming polysilicon stringers.
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