Hybrid silicon optoelectronic device and method of formation

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United States of America Patent

PATENT NO 8994004
APP PUB NO 20130020556A1
SERIAL NO

13359842

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Abstract

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Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

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Patent Owner(s)

  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bowers, John E Santa Barbara, US 70 1683

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