Layered films formed by controlled phase segregation
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United States of America Patent
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Jul 10, 2007
Grant Date -
Aug 17, 2006
app pub date -
Feb 17, 2005
filing date -
Feb 17, 2005
priority date (Note) -
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Abstract
Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.
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