Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 11659706
SERIAL NO

17547464

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Abstract

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A method for fabricating a semiconductor device, including the steps of: providing a substrate comprising a preliminary pattern formed thereon; forming an opening through the preliminary pattern to expose a conductive portion in the substrate; forming a spacer on a sidewall of the opening; performing a wet etching process to form a hole in the conductive portion; removing the spacer; and depositing a conductive pattern over the sidewall of the opening and a surface of the hole.

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Patent Owner(s)

  • XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nam, Chang-Hyeon Singapore, SG 20 46
Yeo, Injoon Singapore, SG 13 36

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