Forming array contacts in semiconductor memories

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United States of America Patent

PATENT NO 8569891
SERIAL NO

12724491

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Abstract

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Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Albini, Giulio Giussano, IT 30 116
Somaschini, Roberto Vimercate, IT 25 302
Tessariol, Paolo Montebelluna, IT 84 276
Vaccaro, Alessandro Gessate, IT 6 25

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