Substrate processing method and substrate processing apparatus

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United States of America

PATENT NO 11315795
APP PUB NO 20210313184A1
SERIAL NO

17223213

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Abstract

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A substrate processing method performed in a substrate processing apparatus includes providing a substrate which has a first film composed of silicon only and a second film including silicon; and etching the first film by plasma formed from a mixed gas including a halogen-containing gas and a silicon-containing gas but not including an oxygen-containing gas.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Masaki Miyagi, JP 86 954
Thomas, Cedric Miyagi, JP 12 8

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