Dual source lithography for direct write application
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United States of America Patent
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Apr 4, 2006
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app pub date -
Mar 7, 2005
filing date -
Sep 17, 2002
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Abstract
A dual exposure source lithography system forms a first and a second portion of a pattern on a wafer. An optical lithography module forms the first portion of the pattern. A non-optical lithography module forms the second portion of the pattern using a non-optical lithography exposure source. The non-optical exposure source is an electron beam lithography source, an EUV source, an x-ray source, or another next generation lithography system exposure source. A mask design file is decomposed into separate design files reflecting critical and non-critical components of the pattern to be formed on the wafer.
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