Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 11244712
APP PUB NO 20210304803A1
SERIAL NO

17011632

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Abstract

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A semiconductor device includes a substrate including an active region and a dummy active region that are spaced apart by an isolation layer, a buried word line extending from the active region to the dummy active region, and a contact plug coupled to an edge portion of the buried word line, wherein an upper surface of the active region is positioned at a higher level than an upper surface of the buried word line, and an upper surface of the dummy active region is positioned at a lower level than the upper surface of the buried word line.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kwon, Se Han Gyeonggi-do, KR 20 28

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