Method and apparatus for self-aligned MOS patterning
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United States of America Patent
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Dec 26, 2006
Grant Date -
Sep 29, 2005
app pub date -
Mar 24, 2004
filing date -
Mar 24, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming a thin film stack on a substrate, wherein the thin film stack includes at least a polysilicon layer and an oxide layer; forming a hardmask layer on the thin film stack; forming an anti-reflective coating (ARC) layer on the hardmask layer; patterning the ARC layer; etching the hardmask layer using the patterned ARC layer as a mask; and etching the thin film stack using the hardmask layer as a mask.
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