Semiconductor memory device using tunneling magnetoresistive elements
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 24, 2006
Grant Date -
Jul 3, 2003
app pub date -
Dec 27, 2002
filing date -
Dec 28, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor memory device which uses tunneling magnetoresistive element as memory cells and eliminates the temperature dependencies in a write margin and read margin in such a way as to be able to accurately output a write current at the time of writing the memory cells. The semiconductor memory device is constructed in such a way that main bit lines or main word lines are laid out so as to cross bit lines or word lines perpendicularly, and a main bit line selector or a main word line selector which respectively selects the main bit line or the main word line is arranged outside a memory cell array.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully