Semiconductor memory devices having extending contact pads and related methods

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United States of America Patent

PATENT NO 7144798
SERIAL NO

10446480

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Abstract

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An integrated circuit device having a semiconductor substrate includes a gate structure on the semiconductor substrate. Source/drain regions are on opposite sides of the gate structure. A contact pad is on at least one of the source/drain region, and a silicide cap is on a surface of the contact pad opposite the respective source/drain region.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jang, Se-Myeong Kyungki-do, KR 32 457
Jin, Gyo-young Kyungki-do, KR 28 396
Oh, Yong-chul Kyungki-do, KR 55 1187

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