Two etchant etch method
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United States of America Patent
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Feb 11, 2003
Issued Date -
N/A
app pub date -
Dec 7, 2001
filing date -
Feb 25, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A two-step etch method for etching a masked layer or layers that include fast and slow etching regions is described. Fast and slow etching regions may arise in a variety of devices, such as microelectrical mechanical system ('MEMS') applications and mixed signal (i.e. analog and digital) integrated circuits, as well as other integrated circuits and devices. In one embodiment, a first etchant is used to etch through the layer in the fastest etching region, and then a second etchant is used to complete etching through the layer in the slowest etching region.
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