Method for fabricating semiconductor device with control of oxide to silicon etching selectivity
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United States of America Patent
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Nov 30, 1999
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N/A
app pub date -
Dec 19, 1996
filing date -
Dec 29, 1995
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Abstract
A method for fabricating a semiconductor device is characterized by using a mixture chemical comprising ozone gas, anhydrous HF gas and deionized water vapor as an etchant for etching an oxide- and silicon-exposed wafer, whereby the etch selection ratio of oxide to silicon can be controlled according to necessity, so that the production yield and reliability of semiconductor device are improved. During etching of a wafer with exposed thermal oxide and exposed silicon, the etch rate ratio of oxide to silicon is controlled by changing the relative flow rates of the ozone gas, anhydrous HF gas and deionized water vapor.
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