Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11799023
APP PUB NO 20220293777A1
SERIAL NO

17406003

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A semiconductor device includes: a semiconductor substrate including an upper surface and a lower surface opposing each other and a drift layer of a first conductivity type; a base layer of a second conductivity type; an emitter layer of the first conductivity type and a contact layer of the second conductivity type; an active trench; dummy trenches; a trench gate electrode formed in the active trench; a dummy trench gate electrode formed in each of the dummy trenches; an embedded insulating film formed on the trench gate electrode in the active trench, formed on the dummy trench gate electrode in the dummy trench, and having an upper end lower than the upper surface; and an emitter electrode contacting the emitter layer on the upper surface and an inner wall of the active trench, and contacting the contact layer on the upper surface and an inner wall of the dummy trench.

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Patent Owner(s)

  • MITSUBISHI ELECTRIC CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishi, Koichi Tokyo, JP 45 165
Soneda, Shinya Tokyo, JP 44 35

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