Method of manufacturing a mask for radiation lithography
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United States of America Patent
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-
Aug 7, 1990
Grant Date -
N/A
app pub date -
Aug 31, 1988
filing date -
Sep 3, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method is set forth of manufacturing a mask for radiation lithography having a mask support and a substrate, on which an absorber layer is provided to be structured according to a desired mask pattern. The absorber layer having a thickness preferably in the range of from 0.2 to 1.2 .mu.m of partly oxidized tungsten having an oxygen content in the range of from 21 to 29 at. % in the layer is deposited on the substrate, preferably by means of cathode sputtering.
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