Apparatus and methods for silicon oxide CVD resist planarization

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United States of America Patent

PATENT NO 8852962
APP PUB NO 20130130405A1
SERIAL NO

13659555

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Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.

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  • APPLIED MATERIALS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gouk, Roman San Jose, US 72 571
Jin, Yu Santa Clara, US 50 367
Shek, Mei-yee Palo Alto, US 41 3941
Verhaverbeke, Steven San Francisco, US 219 2421
Xia, Li-Qun Cupertino, US 248 17709

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