Method for preventing electromigration in an MRAM
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United States of America Patent
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Feb 18, 2003
Grant Date -
Jan 3, 2002
app pub date -
Jul 3, 2001
filing date -
Jul 3, 2000
priority date (Note) -
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Abstract
A method for preventing electromigration in a magnetic random access memory (MRAM) is described. In the method, after a programming step, a signal which compensates for the electromigration and has opposite polarity is fed to the wordline and bitline in such a way that programming does not occur in the memory cells.
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