Open digit line array architecture for a memory array

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7254074
APP PUB NO 20060198220A1
SERIAL NO

11074518

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A system and method for sensing a data state stored by a memory cell that includes coupling a first digit line and a second digit line to a precharge voltage and further coupling a memory cell to the first digit line. At least one digit line other than the first and second digit lines is driven to a reference voltage level and the at least one digit line is coupled to the second digit line to establish a reference voltage in the second digit line. A voltage differential is sensed between the first digit line and the second digit line, and a data state based on the voltage differential is latched in response.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ingalls, Charles L Meridian, ID 114 1444
Kirsch, Howard C Eagle, ID 98 2224
Pinney, David Boise, ID 14 247
Yoon, Sei Seung San Diego, CA 88 1113

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