Etch residue reduction by ash methodology
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United States of America Patent
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Mar 22, 2011
Grant Date -
Jul 2, 2009
app pub date -
Dec 28, 2007
filing date -
Dec 28, 2007
priority date (Note) -
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status (Latency Note)
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Abstract
Methods for forming dual damascene interconnect structures are provided. The methods incorporate an ashing operation comprising a first ash operation and a second overash operation. The ashing operation is performed prior to etching of an etch stop layer. The operation removes residue from a cavity formed during formation of the interconnect structure and facilitates better CD control without altering the cavity profiles.
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