III-V Based semiconductor devices and a process for fabrication
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United States of America Patent
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Jan 15, 1985
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N/A
app pub date -
May 7, 1982
filing date -
May 7, 1982
priority date (Note) -
Expired
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Abstract
Extremely high-purity and defect-free layers of III-V semiconductor materials are produced by a specific MBE process. This process as applied to GaAs includes protecting the deposition substrate with a passivating surface, removing this surface in situ, treating the bared substrate heated to a temperature below its incongruent melting point with an arsenic-containing gas, and initiating the MBE growth in an environment containing an excess of arsenic over gallium.
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