Transverse junction stripe semiconductor laser device
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United States of America Patent
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-
Jun 8, 1982
Grant Date -
N/A
app pub date -
May 13, 1980
filing date -
May 13, 1980
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A p type GaAlAs layer is disposed on an n type substrate and then n type GaAlAs, GaAs and GaAlAs layers are successively grown on the p type GaAlAs layer. Zn is diffused into predetermined portions of those n type layers to a depth reaching the GaAlAs layer to form pn junctions between the original n type regions of the layers and their regions converted to the p form the n type conductivity. The pn junction formed in the GaAs layer serves as a light emitting region.
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