Memory drive device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11315632
SERIAL NO

17255434

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Disclosed is a memory drive device. The memory drive device comprises a control circuit, a reference voltage generation circuit, and a first switch. The control circuit is used to generate a first signal according to an input signal. The reference voltage generation circuit comprises a reference resistor and is used to generate a reference signal according to the first signal. The first switch is coupled to a memory resistor and is used to generate a drive signal according to the first signal so as to set a resistance value of the memory resistor. When the input signal is decreased and a resistance value of the memory resistor is greater than a resistance value of the reference resistor, the time when the drive signal is decreased is greater than the time when the reference signal is decreased.

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Patent Owner(s)

  • JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD.; JIANGSU ADVANCED MEMORY SEMICONDUCTOR CO., LTD.; ALTO MEMORY TECHNOLOGY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wu, Jui-Jen Hsinchu County, TW 74 329

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