Semiconductor device
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United States of America Patent
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Dec 9, 2003
Grant Date -
Jun 20, 2002
app pub date -
Nov 20, 2001
filing date -
Nov 30, 2000
priority date (Note) -
In Force
status (Latency Note)
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Abstract
For preventing .alpha.-rays induced soft errors in a semiconductor device in which solder bumps are connected with Cu wirings formed on Al wirings, bump lands connected with solder bumps and Cu wirings connected integrally therewith are constituted of a stacked film of a Cu film and an Ni film formed thereon, the thickness of the stacked film is larger than the thickness of the photosensitive polyimide resin film, the thickness of the inorganic passivation film, the thickness of the third Al wiring layer and the bonding pad and the thickness of the second interlayer insulative film formed below the Cu wirings and the bump land, that is, the bump land being constituted with such a thickness as larger than any of the thickness for the insulation material and the wiring material interposed between the MISFET (n-channel MISFET and p-channel MISFET) constituting the memory cell and the bump land.
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