Nitride semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11374121
APP PUB NO 20200251586A1
SERIAL NO

16780462

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Abstract

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A nitride semiconductor device 1 includes a first transistor 3 which is constituted of a normally-off transistor and functions as a main transistor and a second transistor 4 which is constituted of a normally-on transistor and arranged to limit a gate current of the first transistor. The first transistor 3 includes a first electron transit layer 7A constituted of a nitride semiconductor and a first electron supply layer 8A which is formed on the first electron transit layer and constituted of a nitride semiconductor. The second transistor 4 includes a second electron transit layer 7B constituted of a nitride semiconductor and a second electron supply layer 8B which is formed on the second electron transit layer and constituted of a nitride semiconductor. A gate electrode 51 and a source electrode 44 of the second transistor 4 are electrically connected to a gate electrode 16 of the first transistor 3.

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Patent Owner(s)

  • ROHM CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Otake, Hirotaka Kyoto, JP 63 305

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