Short-wavelength optoelectronic device including field emission device and its fabricating method
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United States of America Patent
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Oct 31, 2000
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app pub date -
Aug 6, 1998
filing date -
Dec 19, 1997
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Abstract
Provided with a method of fabricating a 200-250 nm short-wavelength optoelectronic device, which has a combination of an optical device with a plurality of acceleration electrodes and a field emission device with a plurality of acceleration electrodes, from a semiconductor having a 5-6 eV energe band gap, based on a principle that an electron-hole pair is produced using a highly energetic electron which is injected from a field emission device, and short-wavelength photons are emitted when the electron recombines with the hole and confined in a quantum well to emit a light corresponding to the energy level of the quantum well, thereby eliminating the need of using dopants for forming n-p junctions in the semiconductor and achieving high efficiency in terms of energy because highly energetic electrons result in one or more electron-hole pairs.
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- 15 United States
- 10 France
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- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Baek, Mun Cheol | Daejeon, KR | 3 | 136 |
Cho, Kyoung Ik | Daejeon, KR | 77 | 673 |
Choi, Sung Woo | Daejeon, KR | 66 | 321 |
Lee, Hae Gwon | Chungcheongnam-Do, KR | 2 | 54 |
Shim, Kyu Hwan | Daejeon, KR | 14 | 918 |
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